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2SA1700(PNP)
TO-251/TO-252-2L Transistor

TO-251
1.BASE


2.COLLECTOR


3.EMITTER


1 2 3
Features
High breakdown voltage
Adoption of MBIT process
Excellent hFE linearity
TO-252-2L
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -400 V
VCEO Collector-Emitter Voltage -400 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current