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SEMICONDUCTOR KTC5706
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, A
MOTOR DRIVERS, STROBES APPLICATION. B D
C
E
FEATURES
F
Adoption of FBET, MBIT Processes.
High Current Capacitance. G
Low Collector-to-Emitter Saturation Voltage.
H
High-Speed Switching. DIM MILLIMETERS
J
Ultra small Package Facilitates Miniaturization in end Products. A 8.3 MAX
K L B 5.8
High Allowable Power Dissipation. C 0.7
D _
3.2 + 0.1
E 3.5
F _
11.0 + 0.3
G 2.9 MAX
M
H 1.0 MAX
J 1.9 MAX
O K _
0.75 + 0.15
N P
1 2 3 L _
15.50 + 0.5
MAXIMUM RATING (Ta=25 ) M _
2.3 + 0.1
N _
0.65 + 0.15
CHARACTERISTIC SYMBOL RATING UNIT 1. EMITTER O 1.6
2. COLLECTOR P 3.4 MAX
Collector-Base Voltage VCBO 80 V 3. BASE
VCES 80
Collector-Emitter Voltage V
VCEO 50 TO-126
Emitter-Base Voltage VEBO 6 V
DC IC 5
Collector Current A
Pulse ICP 7.5
Base Current IB 1.2 A
Collector Power Ta=25 1.5
PC W
Dissipation Tc=25 20
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
2006. 10. 10 Revision No : 0 1/4
KTC5706
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 80 - - V
V(BR)CES IC=100 A, VBE=0 80 - - V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=1mA, IB=0 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6 - - V
VCE(sat)1 IC=1A, IB=50mA - 90 135 mV
Collector-Emitter Saturation Voltage
VCE(sat)2 IC=2A, IB=100mA - 160 240 mV
Base-Emitter Saturation Voltage VBE(sat) IC=2A, IB=100mA - 0.88 1.2 V
DC Current Gain hFE VCE=2V, IC=500mA 200 - 560
Transition Frequency fT VCE=10V, IC=500mA - 400 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz - 13 - pF
Turn-On Time ton PW=20