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AP9T15GH/J
Pb Free Plating Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
Low Gate Charge D BVDSS 20V
Capable of 2.5V gate drive RDS(ON) 50m
Single Drive Requirement G ID 12.5A
RoHS Compliant
S
Description
The Advanced Power MOSFETs from APEC provide the G
D
designer with the best combination of fast switching, S TO-252(H)
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S TO-251(J)
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage