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KTD1302
TRANSISTOR (NPN) SOT-89-3L
FEATURES
Small Flat Package 1. BASE
Audio Muting Application 2. COLLECTOR
High Emitter-Base Voltage
3. EMITTER
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 25 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 12 V
IC Collector Current 300 mA
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 25 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 12 V
Collector cut-off current ICBO VCB=25V,IE=0 100 nA
Emitter cut-off current IEBO VEB=12V,IC=0 100 nA
hFE(1) (FOR) VCE=2V, IC=4mA 200 800
DC current gain
hFE(2)(REV) VCE=2V, IC=4mA 20
Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.25 V
Base-emitter saturation voltage VBE(sat) IC=100mA,IB=10mA 1 V
Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 10 pF
VCE=10V,IC=1mA,
Transition frequency fT 60 MHz
f=100MHz
1
JinYu www.htsemi.com
semiconductor
Date:2011/05