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SEMICONDUCTOR KTC601F
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR


GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION. TENTATIVE
FEATURES
Thin fine pitch super mini 5pin.
Excellent temperature response between these 2 transistor.
High pairing property in hFE.
The follwing characteristics are common for Q1, Q2.




MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
Base Current IB 30 mA
Collector Power Dissipation PC * 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Rating


ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1
DC Current Gain hFE (Note) VCE=6V, IC=2 120 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=100 , IB=10 - 0.1 0.25 V
Transition Frequency fT VCE=10V, IC=1 80 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1 - 2 3.5
Noise Figure NF VCE=6V, IC=0.1 , f=1 , Rg=10 - 1.0 10
Note : hFE Classification Y(4):120 240, GR(6):200 400


EQUIVALENT CIRCUIT (TOP VIEW)
Marking




2005. 12. 6 Revision No : 0 1/3
KTC601F




2005. 12. 6 Revision No : 0 2/3
KTC601F




2005. 12. 6 Revision No : 0 3/3