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2N7002BK
60 V, 350 mA N-channel Trench MOSFET
Rev. 1 -- 17 June 2010 Product data sheet

1. Product profile

1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.

1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified

1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tamb = 25