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2SA1313
SOT-23-3L Transistor(PNP)
1. BASE SOT-23-3L
2. EMITTER
2.92
3. COLLECTOR 0.35
1.17
Features
Excellent hFE Linearity 2.80 1.60
: hFE(2) =25(Min)at VCE =-6V,IC=- 400mA.
High Voltage :VCEO=-50V(Min)
Complements the 2SC3325. 0.15
1.90
MARKING : ACO,ACY Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A
hFE(1) VCE=-1V,IC=-100mA 70 240
DC current gain VCE=-6V,IC=-400mA O 25
hFE(2)
Y 40
Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.25 V
Base-emitter voltage VBE VCE=-1V,IC=-100mA -1 V
Transition frequency fT VCE=-6V,IC=-20mA 200 MHz
Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 13 pF
CLASSIFICATION OF hFE(1)
Rank O Y
Range 70-140 120-240
2SA1313
SOT-23-3L Transistor(PNP)
Typical Characteristics