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STP60N05-14
STP60N06-14
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
STP60N05-14 50 V < 0.014 60 A
STP60N06-14 60 V < 0.014 60 A
s TYPICAL RDS(on) = 0.012
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s)
s LOW GATE CHARGE 3
2
HIGH CURRENT CAPABILITY
t(
s 1
s 175 oC OPERATING TEMPERATURE
uc
s VERY LOW RDS (on) TO-220
s APPLICATION ORIENTED
d
ro
CHARACTERIZATION
APPLICATIONS
P
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
le te
INTERNAL SCHEMATIC DIAGRAM
so
s REGULATORS
s DC-DC & DC-AC CONVERTERS
Ob
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
-
ct (s)
o du
Pr
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
e
let
STP60N05-14 STP60N06-14
V DS Drain-Source Voltage (V gs = 0) 50 60 V
o
bs
VDGR Drain-Gate Voltage (R gs = 20 K) 50 60 V
V GS Gate-Source Voltage