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BULK380D
BULK381D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s LARGE RBSOA
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
3
APPLICATIONS 1
2
s COMPACT FLUORESCENT LAMPS (CFL)
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING SOT-82
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure with planar INTERNAL SCHEMATIC DIAGRAM
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CES Collector-Emitter Voltage (V BE = 0) 750 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 5 A
I CM Collector Peak Current (tp < 5 ms) 8 A
IB Base Current 2 A
I BM Base Peak Current (t p < 5 ms) 4 A
o
P t ot Total Dissipation at T c = 25 C 60 W
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
September 1997 1/6
BULK380D / BULK381D
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-Case Max 2.08 C/W
o
R t hj- amb Thermal Resistance Junction-Ambient Max 80 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 750 V 100