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STS2DPF20V
DUAL P-CHANNEL 20V - 0.14 - 2A SO-8
2.7V-DRIVE STripFETTM II POWER MOSFET
PRELIMINARY DATA

TYPE VDSS RDS(on) ID

<0.20 (@4.5V)
STS2DPF20V 20 V 2A
<0.25 (@2.7V)
s TYPICAL RDS(on) = 0.14 (@4.5V)
s TYPICAL RDS(on) = 0.2 (@2.7V)
s ULTRA LOW THRESHOLD GATE DRIVE (2.7V)
s STANDARD OUTLINE FOR EASY SO-8
AUTOMATED SURFACE MOUNT ASSEMBLY

DESCRIPTION

This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor shows
extremely high packing density for low on- INTERNAL SCHEMATIC DIAGRAM
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.

APPLICATIONS
s BATTERY MANAGMENT IN NOMADIC

EQUIPMENT
s POWER MANAGMENT IN CELLULAR PHONES

MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 20 V
VDGR Drain-gate Voltage (RGS = 20 k) 20 V
VGS Gate- source Voltage