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IRF820
N-channel 500V - 2.5 - 4A TO-220
PowerMeshTMII MOSFET
General features
Type VDSS RDS(on) ID
IRF820 500V <0.3 4A
Extremely high dv/dt capability
100% avalnche tested 3
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New high voltage benchmark
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TO-220
Gate charge minimized
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Description
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The PowerMESHTMII is the evolution of the first
generation of MESH OVERLAYTM. The layout
refinements introduced greatly improve the
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Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching te
Internal schematic diagram
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speed, gate charge and ruggedness.
Applications
Switching application - Ob
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Order codes
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IRF820
Marking
IRF820
Package
TO-220
Packaging
Tube
June 2006 Rev 3 1/12
www.st.com 12
Contents IRF820
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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2/12
IRF820 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 500 V
VDGR Drain-gate voltage (RGS = 20 kW) 500 V
VGS Gate- source voltage