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SEMICONDUCTOR MPSA27
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
DARLINGTON TRANSISTOR
B C
FEATURES
Complementary to MPSA77.
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
MAXIMUM RATINGS (Ta=25 ) F 1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT H 0.45
H J _
14.00 + 0.50
Collector-Base Voltage VCBO 60 V F F K 0.55 MAX
L 2.30
Collector-Emitter Voltage VCES 60 V M 0.45 MAX
N 1.00
C
1 2 3
Emitter-Base Voltage VEBO 10 V
L
M
1. EMITTER
Collector Current IC 500 mA 2. BASE
3. COLLECTOR
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCE=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=10V, IB=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CES IC=100 A, IE=0 60 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 60 - - V
hFE(1) * VCE=5V, IC=10mA 10K - -
DC Current Gain
hFE(2) * VCE=5V, IC=100mA 10K - -
Collector-Emitter Saturation Voltage VCE(sat) * IC=100mA, IB=0.1mA - - 1.5 V
Base-Emitter Voltage VBE * VCE=5V, IC=100mA - - 2 V
* Pulse Test : PW 300 S, Duty Cycle 2%.
2002. 2. 20 Revision No : 1 1/2
MPSA27
2002. 2. 20 Revision No : 1 2/2