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SEMICONDUCTOR KTC4373
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
FEATURES A
C
High Voltage : VCEO=120V.
H
High Transition Frequency : fT=120MHz(Typ.). G
1W(Monunted on Ceramic Substrate).
B
J
E
Small Flat Package.
DIM MILLIMETERS
Complementary to KTA1661. A 4.70 MAX
D D B _
2.50 + 0.20
K C 1.70 MAX
D 0.45+0.15/-0.10
F F
E 4.25 MAX
F _
1.50 + 0.10
G 0.40 TYP
MAXIMUM RATING (Ta=25 ) H 1.75 MAX
1 2 3
J 0.75 MIN
CHARACTERISTIC SYMBOL RATING UNIT K 0.5+0.10/-0.05
Collector-Base Voltage VCBO 120 V
1. BASE
Collector-Emitter Voltage VCEO 120 V 2. COLLECTOR (HEAT SINK)
3. EMITTER
Emitter-Base Voltage VEBO 5 V
Collector Current IC 800 mA
Base Current IB 160 mA
SOT-89
PC 500 mW
Collector Power Dissipation
PC* 1 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
PC* : KTC4373 mounted on ceramic substrate (250mm x0.8t) 2
Marking
h FE Rank Lot No.
Type Name
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=120V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 120 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5.0 - - V
DC Current Gain hFE (Note) VCE=5V, IC=100mA 80 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 1.0 V
Base-Emitter Voltage VBE VCE=5V, IC=500mA - - 1.0 V
Transition Frequency fT VCE=5V, IC=100mA - 120 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 30 pF
Note : hFE Classification O:80 160, Y:120 240
1998. 6. 15 Revision No : 2 1/2
KTC4373
1998. 6. 15 Revision No : 2 2/2