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TECHNICAL DATA

PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354

Devices Qualified Level

JAN, JANTX
2N2604 2N2605
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N2604 2N2605 Units
Collector-Base Voltage VCBO 80 70 Vdc
Collector-Emitter Voltage VCEO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 30 mAdc
Total Power Dissipation @ TA = +250C(1) PT 400 mW/0C
0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
0 TO-46*
Thermal Resistance, Junction-to-Case RJC 0.437 C/mW (TO-206AB)
1) Derate linearly 2.28 mW/0C above TA = +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10