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SEMICONDUCTOR KTD1824
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES
E
High foward current transfer ratio hFE. M B M
Low collector to emitter saturation voltage VCE(sat). DIM MILLIMETERS
A _
2.00 + 0.20
D
High emitter to base voltage VEBO. 2 B _
1.25 + 0.15
_
A
0.90 + 0.10
J
C
Low noise voltage NV. 1 3
G
D 0.3+0.10/-0.05
USM type package, allowing downsizing of the equipment and E _
2.10 + 0.20
G 0.65
automatic insertion through the tape packing and the magazine H 0.15+0.1/-0.06
J 1.30
packing.
K 0.00-0.10
L 0.70
C
H _
L
M 0.42 + 0.10
N 0.10 MIN
N N
K
MAXIMUM RATINGS (Ta=25 )
1. EMITTER
CHARACTERISTIC SYMBOL RATING UNIT
2. BASE
Collector-Base Voltage VCBO 50 V 3. COLLECTOR
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 15 V
DC IC 50 USM
Collector Current mA
Pulse ICP 100
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 150