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SEMICONDUCTOR KTC3880S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Small Reverse Transfer Capacitance A _
2.93 + 0.20
: Cre=0.7pF(Typ.) B 1.30+0.20/-0.15
C 1.30 MAX
D
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz). 2 3 0.45+0.15/-0.05
D
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
L 0.55
P P
MAXIMUM RATING (Ta=25 ) M 0.20 MIN
N 1.00+0.20/-0.10
CHARACTERISTIC SYMBOL RATING UNIT
N
P 7
C
J
Collector-Base Voltage VCBO 40 V M
K
Collector-Emitter Voltage VCEO 30 V
1. EMITTER
Emitter-Base Voltage VEBO 4 V 2. BASE
IC 3. COLLECTOR
Collector Current 20 mA
Emitter Current IE -20 mA
Collector Power Dissipation PC 150 mW
SOT-23
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
h FE Rank Lot No.
Type Name
AQ
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=18V, IE=0 - - 0.5 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.5 A
DC Current Gain hFE (Note) VCE=6V, IC=1mA 40 - 200
Reverse Transfer Capacitance Cre VCB=6V, f=1MHz, IE=0 - 0.7 - pF
Transition Frequency fT VCE=6V, IC=1mA 300 550 - MHz
Collector-Base Time Constant CC rbb' VCB=6V, IE=-1mA, f=30MHz - - 30 pS
Noise Figure NF - 2.5 5.0
VCC=6V, IE=-1mA, f=100MHz (Fig.) dB
Power Gain Gpe 15 18 -
Note : hFE Classification R:40 80, O:70 140, Y:100 200
2003. 6. 20 Revision No : 5 1/6
KTC3880S
Fig. Gpe TEST CIRCUIT
6pF
OUTPUT
R L=50
0.01