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Transistors DTC143XEB
100mA / 50V Digital transistors
(with built-in resistors)
DTC143XEB
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
EMT3F
1.6 0.7
Features 0.26
1) Built-in bias resistors enable the configuration of
0.45
0.86 0.37
(3)
an inverter circuit without connecting external
1.6
input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors
0.45
0.37
(1) (2)
with complete isolation to allow negative biasing 0.5 0.5 0.13
of the input. They also have the advantage of 1.0
almost completely eliminating parasitic effects. (1) IN Each lead has same dimensions
(2) GND
3) Only the on/off conditions need to be set for (3) OUT
Abbreviated symbol : 43
operation, making the device design easy.
Structure Equivalent circuit
NPN silicon epitaxial planar transistor type
(Resistor built-in)
R1 OUT
IN
R2
Packaging specifications
GND
Package EMT3F
Packaging type Taping
Code TL IN OUT
Part No. Basic ordering unit (pieces) 3000
GND
DTC143XEB
R1=4.7k, R2=10k
Absolute maximum ratings (Ta=25 C)
Parameter Symbol Limits Unit
Supply voltage VCC 50 V
Input voltage VIN -7 to +20 V
Ic(max) 1 100 mA
Collector current
2
Output current Io 100 mA
Power dissipation PD 150 mW
Junction temperature Tj 150