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Philips Semiconductors Preliminary Specification

PowerMOS transistor BUK451-100A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic envelope. BUK451 -100A -100B
The device is intended for use in VDS Drain-source voltage 100 100 V
Switched Mode Power Supplies ID Drain current (DC) 3.0 3.0 A
(SMPS), motor control, welding, Ptot Total power dissipation 40 40 W
DC/DC and AC/DC converters, and Tj Junction temperature 175 175