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KSA643(PNP)
TO-92 Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Features
Collector dissipation
Complement to KSD261
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -20 V
VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100uA,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -20 V
Emitter-base breakdown voltage V(BR)EBO IE= -10uA, IC=0 -5 V
Collector cut-off current ICBO VCB= -25 V , IE=0 -0.2 uA
Emitter cut-off current IEBO VEB= -3 V , IC=0 -0.2 uA
DC current gain hFE* VCE= -1 V, IC= -100mA 40 400
Collector-emitter saturation voltage VCE(sat)* IC= -500mA, IB=- 50mA -0.4 V
Base-emitter saturation voltage VBE(sat)* IC= -500mA, IB=- 50mA -1.3 V
* PULSE TEST
CLASSIFICATION OF hFE
Rank R O Y G
Range 40-80 70-140 120-240 200-400
KSA643(PNP)
TO-92 Transistors
Typical Characteristics