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SEMICONDUCTOR BC849/850
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
E
FEATURES L B L
DIM MILLIMETERS
For Complementary With PNP Type BC859/860. A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 0.45+0.15/-0.05
D
A
G
E 2.40+0.30/-0.20
MAXIMUM RATING (Ta=25 )
H
1 G 1.90
H 0.95
CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05
K 0.00 ~ 0.10
BC849 30 L 0.55
VCBO P P
Collector-Base Voltage V M 0.20 MIN
BC850 50 N 1.00+0.20/-0.10
N
C
P 7
J
BC849 30
Collector-Emitter Voltage VCEO V M
K
BC850 45
Emitter-Base Voltage VEBO 5 V
1. EMITTER
Collector Current IC 100 mA 2. BASE
PC * 3. COLLECTOR
Collector Power Dissipation 350 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
SOT-23
PC* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter BC849 30 - -
V(BR)CEO IC=10mA, IB=0 V
Breakdown Voltage BC850 45 - -
Collector-Base BC849 30 - -
V(BR)CBO IC=10 A, IE=0 V
Breakdown Voltage BC850 50 - -
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5 - - V
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 15 nA
DC Current Gain hFE(Note) IC=2mA, VCE=5V 200 - 800
VBE(ON) 1 IC=2mA, VCE=5V 0.58 0.66 0.7
Base-Emitter Voltage V
VBE(ON) 2 IC=10mA, VCE=5V - - 0.77
VCE(sat) 1 IC=10mA, IB=0.5mA - 0.09 0.25
Collector-Emitter Saturation Voltage V
VCE(sat) 2 IC=100mA, IB=5mA - 0.2 0.6
VBE(sat) 1 IC=10mA, IB=0.5mA - 0.7 -
Base-Emitter Saturation Voltage V
VBE(sat) 2 IC=100mA, IB=5mA - 0.9 -
Transition Frequency fT IC=10mA, VCE=5V, f=100MHz - 300 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.5 4.5 pF
BC849 IC=200 A, VCE=5V - - 4.0
Noise Figure NF dB
BC850 Rg=10k , f=1kHz - - 1.0
Note : hFE Classification B:200 450, C:420 800
Marking
MARK SPEC Lot No.
TYPE BC849B BC849C BC850B BC850C
Type Name
MARK 2B 2C 2F 2G
1999. 11. 30 Revision No : 2 1/1