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SSD10N20-400D
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente 9.2A, 200V, RDS(ON) 400m

RoHS Compliant Product
A suffix of "-C" specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. TO-252(D-Pack)
Typical applications are DC-DC converters and power management in portable
and battery-powered products such as computers, printers, PCMCIA cards, cellular
and cordless telephones.

FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed. A
B C
D
High performance trench technology.

GE
PRODUCT SUMMARY
PRODUCT SUMMARY K HF N
VDS(V) RDS(on) m( ID(A) O
P
M J
400@VGS= 10V 9.2 Drain
200
450@VGS= 5.5V 8.7
Millimeter Millimeter
REF. REF.
Gate Min. Max. Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
Source F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20

ABSOLUTE MAXIMUM RATINGS (TA = 25