Text preview for : sfi9530.pdf part of Samsung sfi9530 . Electronic Components Datasheets Active components Transistors Samsung sfi9530.pdf
Back to : sfi9530.pdf | Home
Advanced Power MOSFET SFW/I9530
FEATURES
BVDSS = -100 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
RDS(on) = 0.3
Lower Input Capacitance ID = -10.5 A
Improved Gate Charge
Extended Safe Operating Area
o D2-PAK I2-PAK
175 C Operating Temperature
Lower Leakage Current : 10