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STD5N20
N-CHANNEL 200V - 0.6 - 5A DPAK
MESH OVERLAYTM MOSFET
TYPE VDSS RDS(on) ID
STD5N20 200 V < 0.8 5A
s TYPICAL RDS(on) = 0.6
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3
s ADD SUFFIX "T4" FOR OREDERING IN TAPE &
REEL 1
DPAK
DESCRIPTION TO-252
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding INTERNAL SCHEMATIC DIAGRAM
performance. The new patented STrip layout cou-
pled with the Company's proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 200 V
VDGR Drain-gate Voltage (RGS = 20 k) 200 V
VGS Gate- source Voltage