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2N5401
PNP Transistors
TO-92
1
1. EMITTER 2
3
2. BASE
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol 2N5401 Unit
Collector-Emitter Voltage VCEO -150 Vdc
Collector-Base Voltage VCBO -160 Vdc
Emitter-Base VOltage VEBO -5.0 Vdc
Collector Current IC 600 mAdc
Total Device Dissipation TA=25 C PD 0.625 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) V(BR)CEO -150 - Vdc
Collector-Base Breakdown Voltage (IC= -100