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STP7NC80Z - STP7NC80ZFP
STB7NC80Z - STB7NC80Z-1
N-CHANNEL 800V - 1.3 - 6.5A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESHTMIII MOSFET
TYPE VDSS RDS(on) ID
STP7NC80Z 800 V < 1.5 6.5 A
STP7NC80ZFP 800 V < 1.5 6.5 A
STB7NC80Z 800 V < 1.5 6.5 A 3
STB7NC80Z-1 800 V < 1.5 6.5 A 1
3
s TYPICAL RDS(on) = 1.3 D2PAK 1
2
s EXTREMELY HIGH dv/dt AND CAPABILITY TO-220 TO-220FP
GATE TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
3
s GATE CHARGE MINIMIZED 12
I2PAK
(Tabless TO-220)
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating INTERNAL SCHEMATIC DIAGRAM
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP7NC80Z P7NC80Z TO-220 TUBE
STP7NC80ZFP P7NC80ZFP TO-220FP TUBE
STB7NC80ZT4 B7NC80Z D2PAK TAPE & REEL
STB7NC80Z-1 B7NC80Z I2PAK TUBE
May 2003 1/13
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP7NC80Z
STP7NC80ZFP
STB7NC80Z
STB7NC80Z-1
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 k) 800 V
VGS Gate- source Voltage