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Guilin Strong Micro-Electronics Co.,Ltd.
GMA92 GMA93
MAXIMUM RATINGS
Characteristic Symbol Unit
GMA92 GMA93
Collector-Emitter Voltage
VCEO -300 -200 Vdc
-
Collector-Base Voltage
VCBO -300 -200 Vdc
-
Emitter-Base Voltage
VEBO -6.0 -6.0 Vdc
Collector Current-Continuous
Ic -500 -500 mAdc
-
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation PD
225 mW
FR-5 Board(1)
TA=25 25
1.8 mW/
Derate above25 25
Total Device Dissipation PD
300 mW
Alumina Substrate ,(2)
TA=25 25
2.4 mW/
Derate above25 25
Thermal Resistance Junction to Ambient
RJA 417 /W
Junction and Storage Temperature
TJ,Tstg 150, -55to+150
DEVICE MARKING
GMA92=2D;GMA93=2E
Guilin Strong Micro-Electronics Co.,Ltd.
GMA92 GMA93
ELECTRICAL CHARACTERISTICS
=25 unless otherwise noted 25)
(TA=25 )
Characteristic Symbol Min Max Unit
V(BR)CEO
Collector-Emitter Breakdown Voltage(3)
GMA92 -300 --
-(Ic=-1.0mAdc,IB=0)
GMA93 -200 -- Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
GMA92 -300 --
-(Ic=-100Adc,IE=0)
GMA93 -200 __ Vdc
Emitter-Base Breakdown Voltage
-(IE=-10Adc,Ic=0) V(BR)EBO -5.0 -- Vdc
Emitter Cutoff Current
(VEB=-3.0Vdc,Ic=0) IEBO __ -100 nAdc
Collector Cutoff Current ICBO
(VCB=-200Vdc,IE=0) GMA92 -- -250
(VCB=-160Vdc,IE=0) GMA93 __ -250 nAdc
DC Current Gain HFE --
(Ic=-1.0mAdc,VCE=-10.0Vdc) 25 --
(Ic=-10mAdc,VCE=-10.0Vdc) 40 300
(Ic=-30mAdc,VCE=-10.0Vdc) GMA92 25 --
GMA93 25 __
Collector-Emitter Saturation Voltage VCE(sat)
- GMA92 -- -0.5
(Ic=-20mAdc, IB=-2.0mAdc) GMA93 -- -0.5 Vdc
Base-Emitter Saturation Voltage
-
(Ic=-20mAdc, IB=-2.0mAdc) VBE(sat) -- -0.9 Vdc
Current-Gain-Bandwidth Product
-
(Ic=-10mAdc,VCE=-20Vdc,f=100MHz) fT 50 __ MHz
Ccb
Collector-Base Capacitance
GMA92 -- 6.0 pF
(VCB=-20.0Vdc, IE=0, f=1.0MHz)
GMA93 __ 8.0
FR-5=1.0