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SEMICONDUCTOR PZTA44
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
A
TELEPHONE APPLICATION.
H L
2
FEATURES
High Breakdown Voltage.
K
E B
Collector Power Dissipation : PC=2W(TC=25 )
1 3
J
G
F F
MAXIMUM RATING (Ta=25 )
1 2 3 DIM MILLIMETERS
CHARACTERISTIC SYMBOL RATING UNIT A _
6.5 + 0.2
C
B _
3.5 + 0.2
Collector-Base Voltage VCBO 500 V C 1.8 MAX
D D 0.7+0.15/-0.1
Collector-Emitter Voltage VCEO 400 V E _
7 + 0.3
F 2.3 TYP
Emitter-Base Voltage VEBO 6 V 1. BASE
G 0.26+0.09/-0.02
H 3.0+0.15/-0.1
2. COLLECTOR (HEAT SINK)
Collector Current IC 300 mA J _
1.75 + 0.25
3. EMITTER K 0.1 MAX
Collector Power Dissipation L 10 MAX
PC 2 W
(TC=25 )
Junction Temperature Tj 150
SOT-223
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 500 - - V
Collector-Emitter Breakdown Voltage (1) V(BR)CEO IC=1mA, IB=0 400 - - V
Collector-Emitter Breakdown Voltage (2) V(BR)CES IC=100 A, IB=0 400 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V
VCB=400V, IE=0
Collector Cut off Current ICBO - - 100 nA
VCB=320V, IE=0
VCE=400V, IB=0
Collector Cut off Current ICES - - 500 nA
VCE=320V, IB=0
Emitter Cutoff Current IEBO VEB=4V, IC=0 - - 100 nA
VCE=10V, IC=1mA 40 - -
VCE=10V, IC=10mA 50 - 200
DC Current Gain * hFE
VCE=10V, IC=50mA 45 - -
VCE=10V, IC=100mA 40 - -
Collector-Emitter Saturation Voltage * VCE(sat) IC=10mA, IB=1mA - - 0.5 V
Base-Emitter Saturation Voltage * VBE(sat) IC=10mA, IB=1mA - - 0.75 V
Collector Output Capacitane Cob VCB=20V, IE=0, f=1MHz - - 7 pF
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
2005. 1. 17 Revision No : 0 1/3
PZTA44
h FE - I C TURN-ON SWITCHING CHARACTERISTICS
200 10
COMMON EMITTER V CC =150V
180 VCE =10V 5 I C /I B =10
DC CURRENT GAIN h FE
160 Ta=25 C
3 V BE (OFF)=4V
140
TIME t (