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STP85NF3LL
STB85NF3LL-1
N-CHANNEL 30V - 0.006 - 85A TO-220/I2PAK
LOW GATE CHARGE STripFETTM POWER MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STP85NF3LL 30 V < 0.008 85 A
STB85NF3LL-1 30 V < 0.008 85 A
s TYPICAL RDS(on) = 0.0075 (@4.5V)
s OPTIMAL RDS(ON) x Qg TRADE-OFF @4.5V
s CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED 3 3
12
s
2
1
DESCRIPTION
TO-220
t(
I2PAK
s)
uc
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique "
Single Feature Size" strip-based process. The re-
d
sulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
ro
INTERNAL SCHEMATIC DIAGRAM
P
best performance in terms of both conduction and
switching losses. This is extremely important for
le te
so
motherboards where fast switching and high effi-
ciency are of paramount importance.
- Ob
(s)
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
ct
FOR HIGH EFFICIENCY CPU CORE DC/DC
du
CONVERTERS
o
ABSOLUTE MAXIMUM RATINGS
e Pr
let
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
o
bs
VDGR Drain-gate Voltage (RGS = 20 k) 30 V
VGS Gate- source Voltage