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SEMICONDUCTOR MPS8550S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE E
L B L
Complementary to MPS8050S.
DIM MILLIMETERS
A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
MAXIMUM RATING (Ta=25 )
H
1 G 1.90
H 0.95
CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Collector-Base Voltage VCBO -40 V P P
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
Collector-Emitter Voltage VCEO -25 V
P 7
N
C
J
Emitter-Base Voltage VEBO -6 V
M
K
Collector Current IC -1.5 A
PC * 1. EMITTER
Collector Power Dissipation 350 mW
2. BASE
Junction Temperature Tj 150 3. COLLECTOR
Storage Temperature Range Tstg -55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
SOT-23
Marking
h FE Rank Lot No.
Type Name
BJ
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A, IE=0 -40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-2mA, IB=0 -25 - - V
hFE(1) VCE=-1V, IC=-5mA 45 170 -
DC Current Gain hFE(2) (Note) VCE=-1V, IC=-100mA 85 160 300
hFE(3) VCE=-1V, IC=-800mA 40 80 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-800mA, IB=-80mA - -0.28 -0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-800mA, IB=-80mA - -0.98 -1.2 V
Base-Emitter Voltage VBE VCE=-1V, IC=-10mA - -0.66 -1.0 V
Transition Frequency fT VCE=-10V, IC=-50mA 100 200 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 15 - pF
Note : hFE(2) Classification B:85 160 , C : 120 200 , D : 160 300
2003. 3. 25 Revision No : 1 1/2
MPS8550S
I C - VCE h FE - I C
-0.5 1k
VCE =-1V
COLLECTOR CURRENT IC (mA)
I B =-4.0mA
500
I B =-3.5mA
DC CURRENT GAIN h FE
-0.4
300
I B =-3.0mA
-0.3 I B =-2.5mA
I B =-2.0mA 100
-0.2 I B =-1.5mA
50
I B =-1.0mA
30
-0.1
I B =-0.5mA
0 10
0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -1K
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
I C - VBE V BE(sat), VCE(sat) - I C
-100 -5k
VCE =-1V IC =10I B
COLLECTOR CURRENT I C (mA)
-50 -3k
-30
SATURATION VOLTAGE
V BE(sat), VCE(sat) (mV)
-1k
-10 VBE (sat)
-500
-5 -300
-3
-1 -100
-50 VCE (sat)
-0.5
-0.3 -30
-0.1 -10
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -1K
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA)
fT - IC C ob - VCB
COLLECTOR OUTPUT CAPACITANCE
300 100
TRANSITION FREQUENCY f T (MHz)
V CE =-10V f=1MHz
50 I E =0
30
100
Cob (pF)
10
50
30 5
3
10 1
-1 -3 -5 -10 -30 -50 -100 -300 -1 -3 -5 -10 -30 -50
COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V)
2003. 3. 25 Revision No : 1 2/2