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PZT6718
NPN Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZT6718 is designed for general
purpose medium power amplifier and
switching.
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 6.70 7.30 B 13 T YP.
C
C 2.90 3.10 J 2.30 REF.
6 7 18 D 0.02 0.10 1 6.30 6.70
Date Code
E 0C 10 C 2 6.30 6.70
I 0.60 0.80 3 3.30 3.70
B C E H 0.25 0.35 4 3.30 3.70
5 1.40 1.80
o
ABSOLUTE MAXIMUM RATINGS Ta=25 C
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 1 A
PD Total Power Dissipation 1.5 W
TJ,Tstg Junction and Storage Temperature -55~+150 C
O
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter Symbol Min Typ. Max Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO 100 - - V I C= 100