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2SC3928A
SOT-23-3L Transistor(NPN)

SOT-23-3L
1. BASE
2.92
2. EMITTER 0.35
1.17
3. COLLECTOR

Features 2.80 1.60

Excellent hFE Linearity of DC forward current gain
small collector to emitter saturation voltage
0.15
supper mini package easy mounting 1.90

Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 200 mA
PC Collector Power Dissipation 150 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 6 V
Collector cut-off current ICBO VCB=50V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=4V,IC=0 0.1 A
hFE(1) VCE=6V,IC=1mA 120 820
DC current gain
hFE(2) VCE=6V,IC=0.1mA 70
Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V
Transition frequency fT VCE=6V,IC=10mA 200 MHz
Collector output capacitance Cob VCB=6V,IE=0,f=1MHz 2.5 pF

Noise figure NF VCB=6V,IE=0.1mA,f=1KHz,RG=2K 15 dB

CLASSIFICATION OF hFE(1)
Rank Q R S T

Range 120-270 180-390 270-560 390-820

Marking HQ1 HR1 HS1 HT1
2SC3928A
SOT-23-3L Transistor(NPN)

Typical Characteristics