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Si4837DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY FEATURES
VDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFET
D LITTLE FOOTr Plus Schottky
0.020 @ VGS = - 10 V 8.3
- 30 D 100% Rg Tested
0.030 @ VGS = - 4.5 V 6.8
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY D Battery Charging
D DC/DC Converters
Vf (V)
VKA (V) IF (A) - Asynchronous Buck
Diode Forward Voltage
- Voltage Inverter
30 0.53 V @ 3 A 3
S K
SO-8
K 1 8 A
G
S 2 7 D
S 3 6 D
G 4 5 D
Top View
D A
Ordering Information: Si4837DY
Si4837DY-T1 (with Tape and Reel) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 Sec Steady State Unit
Drain-Source Voltage (MOSFET) VDS - 30
Reverse Voltage (Schottky) VKA 30 V
Gate-Source Voltage (MOSFET) VGS "20
TA = 25_C - 8.3 - 6.1
Continuous Drain Current (TJ = 150_C) (MOSFET)a, b ID
TA = 70_C - 6.6 - 4.9
Pulsed Drain Current (MOSFET) IDM - 40
A
Continuous Source Current (MOSFET Diode Conduction)a, b IS - 2.3 - 1.25
Average Foward Current (Schottky) IF 3
Pulsed Foward Current (Schottky) IFM 20
TA = 25_C 2.5 1.38
Maximum Power Dissipation (MOSFET)a, b
TA = 70_C 1.6 0.88
PD W
TA = 25_C 1.5 1.0
Maximum Power Dissipation (Schottky)a, b
TA = 70_C 0.98 0.64
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 71662 www.vishay.com
S-31726--Rev. B, 18-Aug-03 1
Si4837DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 37 50
Junction-to-Ambient (t v 10 sec)a
Maximum J
M i ti t A bi t )
Schottky 65 81
RthJA
MOSFET 70 90
Maximum Junction-to-Ambient (t = steady state)a
M i J ti t A bi t t d t t ) _C/W
Schottky 100 125
MOSFET 20 25
Maximum Junction to Foot (Drain)
Junction-to-Foot RthJF
Schottky 50 62.5
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = - 24 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 24 V, VGS = 0 V, TJ = 75_C - 10
On-State Drain Currenta ID(on) VDS w - 5 V, VGS = - 10 V - 20 A
VGS = - 10 V, ID = - 8.3 A 0.0165 0.020
Drain Source On State Resistancea
Drain-Source On-State rDS(on) W
VGS = - 4.5 V, ID = - 6.8 A 0.0245 0.030
Forward Transconductancea gfs VDS = - 15 V, ID = - 8.3 A 22 S
Diode Forward Voltagea VSD IS = - 2.3 A, VGS = 0 V - 0.75 - 1.1 V
Dynamicb
Total Gate Charge Qg 22 33
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 5 V, ID = - 8.3 A
, , 9 nC
Gate-Drain Charge Qgd 6.6
Gate-Resistance Rg 1 1.9 2 W
Turn-On Delay Time td(on) 17 26
Rise Time tr VDD = - 15 V, RL = 15 W 15 23
Turn-Off Delay Time td(off) ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 56 85 ns
Fall Time tf 21 32
Source-Drain Reverse Recovery Time trr IF = - 2.3 A, di/dt = 100 A/ms 45 70
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 3 A 0.485 0.53
Forward Voltage Drop VF V
IF = 3 A, TJ = 125_C 0.42 0.47
Vr = 30 V 0.008 0.1
Maximum Reverse Leakage Current
g Irm Vr = 30 V, TJ = 75_C 0.4 5 mA
Vr = 30 V, TJ = 125_C 6.5 20
Junction Capacitance CT Vr = 15 V 102 pF
www.vishay.com Document Number: 71662
2 S-31726--Rev. B, 18-Aug-03
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Output Characteristics Transfer Characteristics
50 50
VGS = 10 thru 5 V
40 40
I D - Drain Current (A)
I D - Drain Current (A)
30 4V 30
20 20
TC = 125_C
10 10
3V
25_C
- 55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.05 3500
Ciss
r DS(on)- On-Resistance ( W )
0.04 2800
C - Capacitance (pF)
0.03 2100
VGS = 4.5 V
VGS = 10 V 1400
0.02
Coss
0.01 700
Crss
0.00 0
0 10 20 30 40 50 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.8
VDS = 15 V VGS = 10 V
ID = 8.3 A ID = 8.3 A
V GS - Gate-to-Source Voltage (V)
1.6
8
r DS(on)- On-Resistance ( W )
1.4
6
(Normalized)
1.2
4
1.0
2
0.8
0 0.6
0 8 16 24 32 40 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 71662 www.vishay.com
S-31726--Rev. B, 18-Aug-03 3
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.070
r DS(on)- On-Resistance ( W )
0.056
I S - Source Current (A)
TJ = 150_C
10 0.042
0.028 ID = 8.3 A
TJ = 25_C
0.014
1 0.000
0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.8 200
0.6 160
VGS(th) Variance (V)
ID = 250 mA
0.4
120
Power (W)
0.2
80
0.0
40
- 0.2
- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2 Notes:
PDM
0.1
0.1
t1
0.05 t2
t1
1. Duty Cycle, D =
t2
0.02 2. Per Unit Base = RthJA = 70_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71662
4 S-31726--Rev. B, 18-Aug-03
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY
Reverse Current vs. Junction Temperature Forward Voltage Drop
100 5
10
I R - Reverse Current (mA)
1
I F - Forward Current (A)
TJ = 150_C
1
0.1
30 V
20 V
TJ = 25_C
0.01
0.001
0.0001 0.1
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8
TJ - Junction Temperature (_C) VF - Forward Voltage Drop (V)
Capacitance
500
400
CT - Junction Capacitance (pF)
300
200
100
0
0 6 12 18 24 30
VKA - Reverse Voltage (V
Document Number: 71662 www.vishay.com
S-31726--Rev. B, 18-Aug-03 5
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2 Notes:
PDM
0.1
0.1
t1
0.05 t2
t1
1. Duty Cycle, D =
t2
0.02 2. Per Unit Base = RthJA = 100_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71662
6 S-31726--Rev. B, 18-Aug-03
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1