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TECHNICAL DATA

NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/99

Devices Qualified Level

2N696 2N697 JAN
2N696S 2N697S

MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Total Power Dissipation @ TA = 250C (1) 0.6 W
PT
@ TC = 250C (2) 2.0 W
0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
0
Thermal Resistance, Junction-to-Case RJC 0.075 C/mW TO-5*
1) Derate linearly 4.0 mW/0C for TA > 250C
2) Derate linearly 13.3 mW/0C for TC > 250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CER Vdc
RBE = 10 , IC = 100 mAdc 40
Collector-Base Cutoff Current
VCB = 100 Vdc ICBO 10