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SEMICONDUCTOR KRC641T~KRC646T
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION.
E
B
FEATURES DIM MILLIMETERS
A _
2.9 + 0.2
1 5
With Built-in Bias Resistors. B 1.6+0.2/-0.1
C _
0.70 + 0.05
Simplify Circuit Design.
G
2 _
D 0.4 + 0.1
Reduce a Quantity of Parts and Manufacturing Process.
F
A
E 2.8+0.2/-0.3
F _
1.9 + 0.2
3 4
G
High Output Current : 800mA. G 0.95
D
H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
K 0.60
L 0.55
C
L
I H
J J
EQUIVALENT CIRCUIT
OUT TYPE NO. R1 (k