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STB160NF02L
N-CHANNEL 20V - 0.0018 - 160A D2PAK
STripFETTM POWER MOSFET
PRELIMINARY DATA

TYPE VDSS RDS(on) ID

STB160NF02L 20 V < 0.0027 160 A
s TYPICAL RDS(on) = 0.0018
s LOW THRESHOLD DRIVE
s ULTRA LOW ON-RESISTANCE
s VERY LOW GATE CHARGE
s 100% AVALANCHE TESTED 3
1
DESCRIPTION D2PAK
This Power MOSFET is the latest development of (TO-263)
STMicroelectronics unique "Single Feature
SizeTM" strip-based process. The resulting tran-
sistor shows extremely high packing density with
ultra low on-resistance, superior switching charac-
INTERNAL SCHEMATIC DIAGRAM
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.

APPLICATIONS
s BUCK CONVERTERS IN HIGH

PERFORMANCE TELECOM AND VRMs
s DC-DC CONVERTERS

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 20 V
VDGR Drain-gate Voltage (RGS = 20 k) 20 V
VGS Gate- source Voltage