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Philips Semiconductors Product specification

PowerMOS transistor BUK465-60A

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a plastic
envelope suitable for surface mount VDS Drain-source voltage -60A
applications. ID Drain current (DC) 60 V
The device is intended for use in Ptot Total power dissipation 41 A
Switched Mode Power Supplies Tj Junction temperature 125 W
(SMPS), motor control, welding, RDS(ON) Drain-source on-state 175