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SEMICONDUCTOR KTA1715
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
POWER AMPLIFIER APPLICATION. A
POWER SWITCHING APPLICATION. B D
C
E
FEATURES
F
Low Collector Saturation Voltage
: VCE(sat)=-0.5V(Max.) (IC=-1A) G
High Speed Switching Time : tstg=1 S(Typ.)
H
Complementary to KTC2814. DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
C 0.7
D _
3.2 + 0.1
E 3.5
_
11.0 + 0.3
MAXIMUM RATING (Ta=25 ) F
G 2.9 MAX
M
H 1.0 MAX
CHARACTERISTIC SYMBOL RATING UNIT
J 1.9 MAX
O K _
0.75 + 0.15
Collector-Base Voltage VCBO -50 V N P
L _
15.50 + 0.5
1 2 3
M _
2.3 + 0.1
Collector-Emitter Voltage VCEO -50 V N _
0.65 + 0.15
1. EMITTER O 1.6
Emitter-Base Voltage VEBO -5 V 2. COLLECTOR P 3.4 MAX
3. BASE
Collector Current IC -2 A
Collector Power Ta=25 1.5
PC W TO-126
Dissipation Tc=25 10
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -50 - - V
hFE (1) (Note) VCE=-2V, IC=-0.5A 70 - 240
DC Current Gain
hFE (2) VCE=-2V, IC=-1.5A 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-1A, IB=-0.05A - - -0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-1A, IB=-0.05A - - -1.2 V
Transition Frequency fT VCE=-2V, IC=-0.5A - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 30 - pF
OUTPUT
Turn On Time ton 20