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BD241BFP
BD242BFP
COMPLEMENTARY SILICON POWER TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s FULLY MOLDED ISOLATED PACKAGE
s 2000 V DC ISOLATION (U.L. COMPLIANT)
APPLICATIONS
s GENERAL PURPOSE SWITCHING
s GENERAL PURPOSE AMPLIFIERS
3
DESCRIPTION 2
1
The BD241BFP is silicon epitaxial-base NPN
transistors mounted in TO-220FP fully molded
isolated package. TO-220FP
It is inteded for power linear and switching
applications.
The complementary PNP types is the BD242BFP.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
NPN BD241BFP
PNP BD242BFP
V CER Collector-Base Voltage (R BE = 100 ) 90 V
V CEO Collector-Emitter Voltage (I B = 0) 80 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 3 A
I CM Collector Peak Current 5 A
IB Base Current 1 A
o
P t ot Total Dissipation at T c 25 C 24 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
For PNP types voltage and current values are negative.
April 1998 1/4
BD241BFP / BD242BFP
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 5.3 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CEO Collector Cut-off V CE = 60 V 0.3 mA
Current (IB = 0)
I CES Collector Cut-off V CE = 80 V 0.2 mA
Current (V BE = 0)
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus ) Collector-Emitter I C = 30 mA 80 V
Sustaining Voltage
(I B = 0)
V CE(sat ) Collector-Emitter IC = 3 A I B = 0.6 A 1.2 V
Saturation Voltage
V BE(ON) Base-Emitter Voltage IC = 3 A V CE = 4 V 1.8 V
h FE* DC Current G ain IC = 1 A V CE = 4 V 25
IC = 3 A V CE = 4 V 10
Pulsed: Pulse duration = 300