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SSE110N03-03P
110A , 30V , RDS(ON) 2.5m
Elektronische Bauelemente N-Channel Enhancement Mode MOSFET

RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free

DESCRIPTION TO-220P
These miniature surface mount MOSFETs utilize a D
High Cell Density trench process to provide low RDS(on)
C
and to ensure minimal power loss and heat dissipation.
B R
T
A
E
FEATURES S

Low RDS(on) Provides Higher Efficiency and G
Extends Battery Life.
F I
Low Thermal impedance copper leadframe
H
TO-220P saves board space. J K
Fast Switching speed. L
High performance trench technology. U
X M
P
N
APPLICATION O V
DC-DC converters and power management in portable
and battery-powered products such as computers, printers, W
Q Q
PCMCIA cards, cellular and cordless telephones. 1 2 3

Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
D2
A 7.90 8.10 N 0.75 0.95
B 9.45 9.65 O 0.66 0.86
C 9.87 10.47 P 13.50 14.50
D - 11.50 Q 2.44 3.44
E 1.06 1.46 R 3.50 3.70
G1 F 2.60 3.00 S 1.15 1.45
G 6.30 6.70 T 4.30 4.70
H 8.35 8.75 U - 2.7
J 1.60 Typ. V 1.89 3.09
S3 K 1.10 1.30 W 0.40 0.60
L 1.17 1.37 X 2.60 3.60
M - 1.50

ABSOLUTE MAXIMUM RATINGS (TA=25