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MPSA42
NPN Silicon General Purpose Transistors
TO-92

1
1. EMITTER 2
3
2. BASE
3. COLLECTOR

MAXIMUM RATINGS* TA=25 unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 310 V
VCEO Collector-Emitter Voltage 305 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA
TJ, Tstg Junction and Storage Temperature -55-150
RJA Thermal Resistance, junction to Ambient 200 /mW
RJC Thermal Resistance, unction to Case 83.3 /mW

*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100uA, IE=0 310 V
Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 305 V
Emitter-base breakdown voltage V(BR)EBO IE=100