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2SD1898
NPN Silicon
Elektronische Bauelemente Epitaxial Planar Transistor
RoHS Compliant Product
Description
SOT-89
The 2SD1898 is designed for switching applications.
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 4.4 4.6 G 3.00 REF.
B 4.05 4.25 H 1.50 REF.
C 1.50 1.70 I 0.40 0.52
D 1.30 1.50 J 1.40 1.60
E 2.40 2.60 K 0.35 0.41
F 0.89 1.20 L 5 q TYP.
M 0.70 REF.
Absolute Maximum Ratings at Ta = 25: :
Parameter Symbol Ratings Unit
Junction Temperature Tj +150
Storage Temperature Tstg -55 ~ +150
Collector to Base Voltage VCBO 100 V
Collector to Emitter Voltage VCEO 80 V
Emitter to Base Voltage VEBO 5.0 V
IC 1 A
Collector Current
ICP (Single pulse Pw=20ms) 2 A
Total Power Dissipation PD 500 mW
Characteristics at Ta = 25: :
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=50uA
BVCEO 80 - - V IC=1mA
BVEBO 5 - - V IE=50uA
ICBO - - 1 uA VCB=80V
IEBO - - 1 uA VEB=4V
VCE(sat) - - 400 mV IC=500mA, IB=20mA
hFE 82 - 390 VCE=3V, IC=500mA
fT 100 - MHZ VCE=10V,IC=50mA,f=100MHZ
Cob - 25 - pF VCB=10V,IE=0, f=1MHz
Classification Of hFE
Rank P Q R
hFE 82-180 120-270 180-390
Marking Code : DF
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
08-May-2007 Rev. A Page 1 of 2
2SD1898
NPN Silicon
Elektronische Bauelemente Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
08-May-2007 Rev. A Page 2 of 2