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SEMICONDUCTOR KTA2014
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES M B M
Excellent hFE Linearity DIM MILLIMETERS
A _
2.00 + 0.20
D
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). 2 B _
1.25 + 0.15
_
A
C 0.90 + 0.10
J
Low Noise : NF=1dB(Typ.), 10dB(Max.). 1 3
G
D 0.3+0.10/-0.05
Complementary to KTC4075. E _
2.10 + 0.20
G 0.65
Small Package. H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
L 0.70
C
H _
L
M 0.42 + 0.10
N 0.10 MIN
N N
K
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
1. EMITTER
Collector-Base Voltage VCBO -50 V 2. BASE
3. COLLECTOR
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -150 mA
USM
Base Current IB -30 mA
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 150