m8550_sot-23.pdf part of LGE m8550 sot-23 m8550_sot-23.pdf, . Electronic Components Datasheets Active components Transistors LGE m8550

Text preview for : m8550_sot-23.pdf part of LGE m8550 sot-23 . Electronic Components Datasheets Active components Transistors LGE m8550_sot-23.pdf

Back to : m8550_sot-23.pdf | Home

M8550
SOT-23 Transistor(PNP)

1. BASE SOT-23
2. EMITTER
3. COLLECTOR

Features
Power dissipation

MARKING: Y21

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
Dimensions in inches and (millimeters)
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -0.8 A
PC Collector power dissipation 200 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A , IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO* IC= -1mA , IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -6 V
Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 A
Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 A
hFE(1) VCE=-1V, IC=-5mA 45
DC current gain hFE(2) VCE=-1V, IC=-100mA 85 300
hFE(3) VCE=-1V, IC=-800mA 40
Collector-emitter saturation voltage VCE(sat) IC= -800mA, IB=-80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V
VCE=-6V, IC= -20mA
Transition frequency fT 150 MHz
f=30MHz

* Pulse Test :pulse width 300