php32n06lt_phb32n06lt.pdf part of Philips php32n06lt phb32n06lt php32n06lt_phb32n06lt.pdf, . Electronic Components Datasheets Active components Transistors Philips php32n06lt

Text preview for : php32n06lt_phb32n06lt.pdf part of Philips php32n06lt phb32n06lt . Electronic Components Datasheets Active components Transistors Philips php32n06lt_phb32n06lt.pdf

Back to : php32n06lt_phb32n06lt.pdf | Home

PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
Rev. 01 -- 06 November 2001 Product data

1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOSTM1 technology.

Product availability:
PHP32N06LT in SOT78 (TO220AB)
PHB32N06LT in SOT404 (D2-PAK).

2. Features
s TrenchMOSTM technology
s Logic level compatible.

3. Applications
s General purpose switching
s Switched mode power supplies.

4. Pinning information
Table 1: Pinning - SOT78 (TO-220AB), SOT404 (D2-PAK), simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb mb d
2 drain (d) [1]

3 source (s)
g

mb mounting base;
MBB076 s
connected to drain (d)
2
1 3 MBK116
MBK106
1 2 3

SOT78 (TO-220AB) SOT404 (D2-PAK)

[1] It is not possible to make connection to pin 2 of the SOT404 package.

1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor

5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) - 60 V
ID drain current (DC) Tmb = 25