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TIP31A/31B/31C
TIP32A/32B/32C
COMPLEMENTARY SILICON POWER
TRANSISTORS

n TIP31A, TIP31C, TIP32A,TIP32B, AND
TIP32C ARE SGS-THOMSON PREFERRED
SALESTYPES

DESCRIPTION
The TIP31A, TIP31B and TIP31C are silicon
epitaxial-base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
medium power linear and switching applications. 3
The complementary PNP types are TIP32A, 2
1
TIP32B and TIP32C.
TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Unit
NPN T IP31A TIP31B T IP31C
PNP T IP32A TIP32B T IP32C
V CBO Collector-Base Voltage (I E = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (IB = 0) 60 80 100 V
V EBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 3 A
I CM Collector Peak Current 5 A
IB Base Current 1 A
o
P tot T otal Dissipation at Tc ase 25 C 40 W
Tamb 25 o C 2 W
o
T s tg Storage T emperature -65 to 150 C
o
Tj Max. Operating Junction T emperature 150 C
For PNP types voltage and current values are negative.

October 1995 1/4
TIP31A/TIP31B/TIP31C/TIP32A/TIP32B/TIP32C

THERMAL DATA
o
R thj -ca se Thermal Resistance Junction-case Max 3.12 C/W
o
R thj- amb Thermal Resistance Junction-ambient Max 62.5 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
I CBO Collector Cut-off for TIP31A/32A
Current (I B = 0) V CE = 30 V 0.3 mA
for TIP31B/31C/32B/32C
V CB = 60 V 0.3 mA
I CES Collector Cut-off for T IP31A/32A V CE = 60 V 0.2 mA
Current (V BE = 0) for T IP31B/32B V CE = 80 V 0.2 mA
for TIP31C/32C V CE = 100 V 0.2 mA
I EBO Emitter Cut- off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) * Collector-Emitter I C = 30 mA
Sustaining Voltage for T IP31A/32A 60 V
(I B = 0) for T IP31B/32B 80 V
for T IP31C/32C 100 V
V CE(sat )* Collector-Emitter IC = 3 A I B = 375 mA 1.2 V
Saturation Voltage
V BE(on) * Base-Emitter Voltage IC = 3 A V CE = 4 V 1.8 V
h FE* DC Current Gain IC = 1 A V CE = 4 V 25
IC = 3 A V CE = 4 V 10 50
hfe Small Signal Current I C = 0.5 A V CE = 10 V
Gain f = 1 KHz 20
I C = 0.5 A V CE = 10 V
f = 1 MHz 3
Pulsed: Pulse duration = 300