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BUK6212-40C
N-channel TrenchMOS intermediate level FET
Rev. 2 -- 21 September 2010 Product data sheet

1. Product profile

1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using TrenchMOS technology. This product has been designed and
qualified to the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits
AEC Q101 compliant Suitable for thermally demanding
Suitable for standard and logic level environments due to 175