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BUJ105AD
Silicon diffused power transistor
Rev. 01 -- 14 December 2004 Product data sheet




1. Product profile

1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428
(D-PAK) surface mounted package.

1.2 Features
s Low thermal resistance s Fast switching


1.3 Applications
s Electronic lighting ballast s DC-to-DC converters
s Inverters s Motor control systems


1.4 Quick reference data
s VCESM 700 V s IC 8 A
s Ptot 80 W s hFEsat = 11 (typ)


2. Pinning information
Table 1: Pinning
Pin Description Simplified outline Symbol
1 base
[1] mb
2 collector 2

3 emitter
1
mb mounting base; connected to collector
3
2
sym056
1 3

SOT428 (D-PAK)

[1] It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package.
Philips Semiconductors BUJ105AD
Silicon diffused power transistor



3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
BUJ105AD D-PAK plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428


4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCESM peak collector-emitter voltage VBE = 0 V - 700 V
VCEO collector-emitter voltage open base - 400 V
VCBO collector-base voltage open emitter - 700 V
IC collector current (DC) - 8 A
ICM peak collector current - 16 A
IB base current (DC) - 4 A
IBM peak base current - 8 A
Ptot total power dissipation Tmb = 25