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STH60N10/FI
STW60N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR

TYPE VDSS R DS(on) ID
STH60N10 100 V < 0.025 60 A
STH60N10FI 100 V < 0.025 36 A
TO-247
STW60N10 100 V < 0.025 60 A

s TYPICAL RDS(on) = 0.02
3
s AVALANCHE RUGGED TECHNOLOGY 2
s 100% AVALANCHE TESTED 1

s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s VERY HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE 3 3
2 2
s APPLICATION ORIENTED 1
1
CHARACTERIZATION TO-218 ISOWATT218

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS INTERNAL SCHEMATIC DIAGRAM
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STH/STW60N10 STH60N10FI
V DS Drain-source Voltage (V GS = 0) 100 V
V DGR Drain- gate Voltage (R GS = 20 k) 100 V
V GS Gate-source Voltage