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BUK7E07-55B
N-channel TrenchMOS standard level FET
Rev. 01 -- 29 January 2008 Product data sheet




1. Product profile

1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC standard for use in Automotive critical
applications.

1.2 Features
I Very low on-state resistance I Q101 compliant
I 175