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TECHNICAL DATA

PNP DUAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/496

Devices Qualified Level
JAN
2N5796
2N5795 JANTX
2N5796U
JANTXV

MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current 600 mAdc
TO-78*
IC
(1) (2)
One Both
Section Sections
Total Power Dissipation @ TA = +250C PT 0.5 0.6 W
0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +175 C
1) Derate linearly 2.86 mW/0C for TA +250C
2) Derate linearly 3.43 mW/0C for TA +250C 6 PIN SURFACE
MOUNT*
*See
MILPRF19500/496 for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO 60 Vdc
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 50 Vdc ICBO 10 Adc
VCBO = 60 Vdc 10